GTVA212701FA-V2-R0

Overview

The GTVA212701FA-V2-R0 is a GaN-on-SiC HEMT amplifier operating in the 2.11GHz to 2.2GHz frequency band. It delivers an output power of 270W with a gain of 19dB at a test voltage of 48V and current of 320mA. The device features input matching, high efficiency, and utilizes a thermally enhanced earless package.

Feature Summary

• Utilizes GaN on SiC HEMT technology for robust performance
• Features integrated input matching for simplified circuit design
• Designed with high efficiency characteristics
• Housed in a thermally enhanced earless package

Applications

• RF amplification in the 2110 to 2200 MHz frequency band
• High-power RF signal processing applications
• Communication systems requiring efficient amplification

Procurement Notes

Verify the specific suffix V2-R0 against official MACOM documentation to confirm package type and reel specifications. Ensure compatibility with 48V supply requirements and thermal management solutions suitable for 270W output devices. Cross-reference datasheet parameters for precise gain and efficiency metrics before integration.

Selection Notes

Select this component for applications requiring high output power within the 2.11-2.2GHz range. Consider the thermally enhanced earless package for effective heat dissipation. Verify that the system design supports the required 48V bias voltage and 320mA current draw for optimal operation.

Part Context

This part belongs to MACOM's family of GaN-on-SiC HEMT amplifiers. It is designed for high-power RF applications, offering superior performance compared to traditional technologies. The V2-R0 designation indicates specific packaging and versioning details provided by the manufacturer.

Replacement Considerations

Consult official MACOM substitution lists for verified alternatives. Generic replacements may not match the specific thermal or electrical characteristics of the GaN-on-SiC HEMT technology used in this component.