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The GTVA220701FA-V1-R2 is a 70-watt GaN-on-SiC HEMT D-mode amplifier designed for multi-standard cellular power amplifier applications. It operates at 28V and supports frequencies up to 3.5 GHz, delivering high linearity and efficiency in compact form factors suitable for modern wireless infrastructure.
Verify the specific suffix -R2 indicates tape and reel packaging configuration against official MACOM documentation. Confirm RoHS compliance status and ensure the component matches the exact die revision required for your design. Cross-reference with authorized distributors to validate authenticity and traceability of the GaN substrate.
Select this component when designing for high-power density requirements in cellular infrastructure. Ensure the application circuit supports depletion-mode operation characteristics. Verify that the thermal management solution accommodates the heat dissipation needs of GaN-on-SiC devices operating at 28V.
This part belongs to MACOM's portfolio of GaN-based RF power amplifiers. It complements other wide-bandwidth solutions aimed at replacing traditional LDMOS or GaAs technologies in next-generation mobile network equipment requiring higher efficiency and smaller footprint.
Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified alternatives or updated revisions within the same product family.