GTVA261701FA-V1-R0

Overview

The GTVA261701FA-V1-R0 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. Designed for radio frequency applications, this single N-Channel device operates within the 2.62 GHz to 2.69 GHz frequency range. It delivers an output power of 170 W with a gain of 17 dB. The component features a drain-source breakdown voltage of 150 V and supports a continuous drain current of 7.5 A. It utilizes an H-37265J-2 surface-mount package and functions at maximum operating temperatures up to +225°C.

Feature Summary

• Utilizes GaN on Silicon Carbide technology for high-power RF performance
• Engineered for linear amplification in narrow-band applications
• Designed for robust thermal management in high-temperature environments

Applications

• Base station power amplifiers
• Military radar systems
• Electronic warfare equipment

Procurement Notes

Verify the specific suffix against official MACOM documentation to confirm pinout and electrical tolerances. Ensure compatibility with the H-37265J-2 footprint during PCB layout. Confirm RoHS compliance status through the latest datasheet revision. Validate thermal interface requirements for the specified maximum junction temperature before integration into the final assembly.

Selection Notes

Select this component when designing narrow-band RF power stages requiring high linearity and efficiency in the 2.6 GHz range. Consider the 150 V breakdown rating for system headroom. Evaluate the 170 W output capability against load impedance matching networks. Assess the SMD package constraints for thermal dissipation strategies in dense enclosures.

Part Context

This part belongs to MACOM's portfolio of GaN FETs intended for demanding wireless infrastructure and defense markets. It represents a discrete solution for high-power amplification, distinct from integrated MMICs. The device leverages advanced semiconductor processes to achieve superior power density compared to traditional LDMOS technologies in similar frequency bands.

Replacement Considerations

Consult MACOM engineering for qualified substitutes. Cross-reference pinouts and thermal characteristics carefully. Verify that alternative devices meet the 170 W output and 17 dB gain specifications without compromising system reliability or regulatory compliance.