GTVA261802FC-V1-R0

Overview

The GTVA261802FC-V1-R0 is an active RF MOSFET utilizing HEMT technology, manufactured by MACOM Technology Solutions. It operates within a frequency range of 2.62GHz to 2.69GHz and provides a gain of 16.8dB. The device requires a test voltage of 48V and supports a current of 160mA. Packaged in the H-37248C-4 format on a tape and reel, this component is designed for high-frequency radio frequency applications requiring stable amplification characteristics.

Feature Summary

• Utilizes HEMT technology for RF signal processing
• Provides fixed gain performance at specified frequencies
• Operates with defined voltage and current parameters

Applications

• RF amplifier circuits
• Radio frequency signal processing systems
• High-frequency communication equipment

Procurement Notes

Verify the specific part number GTVA261802FC-V1-R0 against official MACOM documentation to ensure compatibility with system requirements. Confirm that the H-37248C-4 package type matches the intended PCB layout. Ensure that the 48V operating voltage aligns with the power supply design. Check for any specific handling instructions related to the tape and reel packaging during assembly processes.

Selection Notes

Select this component when a gain of approximately 16.8dB is required within the 2.62GHz to 2.69GHz band. Consider the 48V test voltage requirement for power supply design. Evaluate the HEMT technology suitability for the specific application environment. Compare the physical dimensions of the H-37248C-4 package against available board space constraints before finalizing the design choice.

Part Context

This RF MOSFET belongs to the category of RF FETs and MOSFETs produced by MACOM Technology Solutions. It is distinct from other components in the catalog due to its specific frequency range and gain characteristics. The HEMT technology differentiates it from standard MOSFETs, offering specific performance traits relevant to high-frequency operations within the defined operational parameters.