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Product Detailed Parameters
- Description：RF MOSFET HEMT 48V H-87265J-2
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR)
- Technology：HEMT
- Frequency：2.62GHz ~ 2.69GHz
- Gain：17dB
- Voltage - Test：48 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：320 mA
- Power - Output：270W
- Voltage - Rated：125 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：H-87265J-2
- Supplier Device Package：H-87265J-2
- Configuration：-
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Overview
The GTVA262701FA-V2-R2 is an RF MOSFET HEMT from MACOM Technology Solutions, designed for high-power applications. It features a maximum operating frequency range of 2.496 GHz to 2.69 GHz and delivers an output power of 270 W. The device provides a gain of 17 dB with a test current of 320 mA at a test voltage of 48 V. It has a rated voltage of 125 V and utilizes a surface mount mounting type in the H-87265J-2 package.
Feature Summary
- High efficiency and high gain performance
- Industry-leading power capabilities
- Designed explicitly for next-generation RF power transistors
Applications
- RF power amplifier modules
- Base station infrastructure
- Wireless communication systems
Procurement Notes
Verify the specific part number GTVA262701FA-V2-R2 against official MACOM documentation to ensure compatibility with your design requirements. Confirm that the H-87265J-2 package and surface mount configuration match your PCB layout. Check for any specific handling instructions related to RF MOSFET HEMT devices to prevent electrostatic discharge damage during installation and operation.
Selection Notes
Select this component when designing systems requiring high output power around 270 W within the 2.496 GHz to 2.69 GHz frequency band. Consider its 17 dB gain and 125 V rated voltage for robust performance in demanding RF environments. Ensure thermal management solutions are adequate for the power dissipation associated with this high-efficiency HEMT technology.
Part Context
This component belongs to MACOM's next-generation RF power transistor family, which emphasizes industry-leading gain and efficiency. It is categorized under RF FETs and MOSFETs, specifically utilizing HEMT technology. The product line targets advanced wireless infrastructure applications where high power density and reliability are critical for system performance.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult MACOM directly for potential alternatives or updated versions within their RF MOSFET portfolio.
