GTVA262711FA-V2-R0

Overview

The GTVA262711FA-V2-R0 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by MACOM Technology Solutions. Designed for high-power radio frequency applications, this N-Channel device operates within the frequency range of 2496 MHz to 2690 MHz. It delivers an output power of 300 W with a gain of 18 dB. The component features a drain-source breakdown voltage of 125 V and supports a continuous drain current of 12 A. It utilizes an H-87265J-2 package with screw mount installation style and functions at maximum operating temperatures up to +225°C.

Feature Summary

• High-efficiency GaN HEMT technology optimized for RF power amplification
• Capable of delivering 300 W output power in the specified frequency band
• Robust thermal performance supporting operation up to +225°C
• Designed for robust mechanical integration via screw mount packaging

Applications

• Base station power amplifiers
• Broadband RF power amplification systems
• Military radar transmitters

Procurement Notes

Verify the specific revision suffix against the latest manufacturer datasheet to ensure compatibility with current design requirements. Confirm that the H-87265J-2 package dimensions align with your thermal management and mounting infrastructure. Ensure that gate drive voltages remain within the specified -10 V to 2 V range to prevent device damage during operation.

Selection Notes

Select this component when designing systems requiring high linearity and efficiency in the 2.5 GHz to 2.7 GHz range. Consider the 125 V breakdown voltage for headroom in high-voltage supply designs. Evaluate the screw mount requirement against available board space and thermal interface solutions. Compare the 18 dB gain specification against system link budget requirements to determine if additional amplification stages are necessary.

Part Context

This part belongs to MACOM's portfolio of GaN field-effect transistors engineered for demanding RF environments. The series emphasizes scalability and reliability for infrastructure applications. MACOM provides comprehensive design support including non-linear models for simulation tools like Keysight ADS and AWR Microwave Office to facilitate integration into complex amplifier architectures.

Replacement Considerations

Consult official MACOM documentation for qualified substitute part numbers. Verify pinout compatibility and thermal characteristics before substituting any alternative components from other manufacturers.