GTVA262711FA-V2-R2

Overview

The GTVA262711FA-V2-R2 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by MACOM Technology Solutions. It operates within the frequency range of 2496 to 2690 MHz and delivers an output power of 300 W. The device features a drain-source breakdown voltage of 125 V and a continuous drain current of 12 A. It utilizes an H-87265J-2 package with screw mount installation style. The transistor supports a gate-source voltage range from -10 V to +2 V and maintains a maximum operating temperature of +225°C.

Feature Summary

• High-power RF performance utilizing GaN HEMT technology for efficient amplification
• Robust thermal capability supporting operation up to +225°C
• Designed for robustness with high drain-source breakdown voltage

Applications

• Base station power amplifiers in the 2.6 GHz band
• Broadband RF power amplifier modules
• Military and aerospace communication systems

Procurement Notes

Verify the specific suffix against official documentation, as the provided model ends in R2 while primary sources cite R0. Confirm package compatibility and RoHS status via the manufacturer datasheet. Ensure the supplier provides valid traceability documents. Cross-reference the part number with MACOM's official product change notifications to verify current manufacturing status and any recent design revisions before procurement.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2.6 GHz spectrum. Consider the 125 V breakdown voltage for headroom requirements. Evaluate the screw mount package for thermal management solutions compatible with the specified power dissipation. Compare gain specifications against system link budget requirements to ensure adequate signal amplification without excessive noise figure degradation.

Part Context

This device belongs to MACOM's portfolio of GaN on Silicon Carbide (GaN-on-SiC) transistors designed for high-power RF applications. It represents a generation of components optimized for base station infrastructure, offering superior power density compared to traditional silicon LDMOS technologies. The series focuses on reliability and thermal stability for demanding wireless communication environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult MACOM technical support for direct replacements or pin-compatible alternatives.