GTVA263202FC-V1-R2

Overview

The GTVA263202FC-V1-R2 is an active GaN on SiC HEMT RF transistor from MACOM Technology Solutions. It operates within the frequency range of 2.62 GHz to 2.69 GHz and features a typical gain of 17 dB. The device is designed for combined output applications, requiring a test voltage of 48 V and a test current of 320 mA. At 2690 MHz, it delivers an output power at P3dB of 340 W. The component is housed in a Tape & Reel (TR) package and complies with RoHS3 standards.

Feature Summary

• Utilizes GaN on SiC HEMT technology for high-performance RF amplification
• Features input matching for simplified circuit integration
• Optimized for combined output configurations to achieve high power levels

Applications

• Telecommunications infrastructure
• Industrial systems
• Defense electronics

Procurement Notes

Verify the specific suffix -V1-R2 against official MACOM documentation to ensure correct revision and packaging. Confirm RoHS3 compliance status and moisture sensitivity level requirements during storage and handling. Cross-reference the part number with authorized distributors to validate authenticity and avoid counterfeit components.

Selection Notes

Select this component when high output power at 2.62–2.69 GHz is required in a combined output topology. Ensure the design supports the specified 48 V test voltage and 320 mA test current. Consider the Tape & Reel packaging format for automated assembly processes.

Part Context

This part belongs to MACOM's portfolio of GaN on SiC HEMT transistors designed for demanding RF applications. It complements other MACOM devices such as the GTVA262701FA-V2-R2, sharing similar frequency ranges but differing in specific power and current parameters. These components serve critical roles in modern telecommunications and defense sectors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs before considering alternative sources.