GTVA311801FA-V1-R0

Overview

The GTVA311801FA-V1-R0 is a radio frequency power amplifier manufactured by MACOM Technology Solutions. It utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology to deliver high performance in the L-band spectrum. The device operates within a frequency range of 2.7 GHz to 3.1 GHz and provides an output power of 180 W. Designed for robust RF applications, it features a pill package configuration suitable for high-power density requirements.

Feature Summary

• Utilizes high-performance GaN-on-SiC production process for superior power density
• Optimized for L-band radio frequency amplification applications
• Engineered for high linearity and efficiency in broadband systems

Applications

• Military radar systems
• Electronic warfare platforms
• Communications infrastructure

Procurement Notes

Verify component authenticity through authorized MACOM distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance status prior to acquisition. Note that this specific part number may have limited availability or be subject to restricted supply conditions depending on regional distribution agreements.

Selection Notes

Select this component for designs requiring high output power in the 2.7-3.1 GHz band. Ensure thermal management solutions accommodate the power dissipation characteristics of the pill package. Verify impedance matching networks align with the device's input and output impedances at the target operating frequencies.

Part Context

This component belongs to MACOM's portfolio of GaN HEMT devices designed for demanding RF environments. It represents a solution for applications needing significant power handling capabilities within a compact form factor, leveraging advanced semiconductor materials for enhanced reliability and performance compared to traditional silicon-based alternatives.