GTVA311801FA-V1

Overview

The GTVA311801FA-V1 is a gallium nitride high electron mobility transistor (GaN HEMT) power amplifier from MACOM Technology Solutions. It operates within the 2.7 GHz to 3.1 GHz frequency range and delivers an output power of 180 W. The device requires a supply voltage of 50 V and provides a gain of 15 dB. Designed for surface mount installation, it utilizes GaN on Silicon Carbide technology and supports a maximum operating temperature of +225°C.

Feature Summary

• Utilizes GaN on Silicon Carbide technology for high-power RF performance
• Engineered for high thermal stability with a maximum junction temperature of +225°C
• Designed for surface-mount integration in compact RF systems

Applications

• Military electronic warfare systems
• Base station transmitter modules
• High-power radar applications

Procurement Notes

Verify component authenticity through authorized channels due to limited availability. Confirm RoHS compliance status via official documentation. Check for recent Product Change Notifications regarding manufacturing updates. Ensure compatibility with existing thermal management solutions given the high power dissipation requirements.

Selection Notes

Evaluate thermal resistance capabilities against system heat sink designs. Verify biasing circuitry compatibility with the specified 50 V supply requirement. Assess impedance matching networks for the target frequency band. Consider package constraints for surface-mount assembly processes.

Part Context

This component belongs to MACOM's portfolio of high-performance GaN HEMT amplifiers designed for demanding RF environments. It represents a specific variant optimized for S-band operations, offering a balance of high output power and efficiency suitable for infrastructure and defense applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult MACOM technical support for current alternatives or obsolescence management options.