GTVA355001EC-V1-R0

Overview

The GTVA355001EC-V1-R0 is a 500-watt GaN on SiC high electron mobility transistor (HEMT) designed for the 2900 to 3500 MHz frequency band. It operates with a 50V supply voltage and draws 200mA of current. The device provides 13.5dB gain and features input and output matching networks integrated into the package.

Feature Summary

• Utilizes GaN on SiC HEMT technology for high power density
• Includes integrated input and output matching networks
• Designed for operation in the 2900 to 3500 MHz band

Applications

• Base station power amplification
• Point-to-point microwave links
• Broadband communication systems

Procurement Notes

Verify the specific suffix V1-R0 against the manufacturer datasheet to confirm tape and reel packaging specifications. Ensure compatibility with thermal management requirements for 500W output power. Confirm RoHS3 compliance status if required by project regulations before finalizing procurement orders.

Selection Notes

Select this component when high linearity and efficiency are critical in the C-band spectrum. The integrated matching simplifies circuit design compared to discrete solutions. Evaluate thermal resistance capabilities to ensure reliable operation at full rated power output within the system enclosure constraints.

Part Context

This part belongs to MACOM's portfolio of GaN on SiC RF power transistors. These devices target demanding applications requiring high power density and wide bandwidth. The product line supports telecommunications infrastructure and defense radar systems where reliability under high stress conditions is essential.

Replacement Considerations

Public confirmed substitute part numbers: None available.