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GWM120-0075X1-SMDSAM is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 6N-CH 75V 110A ISOPLUS. Review the specifications below when checking this part for your BOM.
The GWM120-0075X1-SMDSAM is a six-channel N-channel MOSFET array manufactured by IXYS. It features a 75V drain-source voltage rating and supports a continuous current of 110A. The device utilizes ISOPLUS-DIL surface-mount packaging for efficient thermal management. Key electrical characteristics include low on-state resistance and optimized switching performance suitable for high-frequency power conversion applications.
Verify component authenticity through authorized IXYS distributors or certified partners. Confirm that the received parts match the specific SMDSAM suffix designation to ensure correct pinout and package compatibility. Request original manufacturer documentation to validate technical specifications against current datasheet revisions prior to integration into production systems.
Select this component when a compact, multi-channel solution is required for low-voltage power stages. The ISOPLUS-DIL package facilitates automated surface-mount assembly while providing robust thermal dissipation capabilities. Ensure the application voltage remains within the 75V limit and that the thermal design accommodates the 110A current capacity under expected operating conditions.
This part belongs to the GWM series of integrated MOSFET arrays from IXYS. These components are designed to replace discrete transistor arrangements in space-constrained designs. The series offers improved reliability and reduced board footprint compared to individual discrete devices, serving as a key element in modern power electronics architectures.
Direct replacements must maintain the 75V rating, 110A current capacity, and six-channel configuration. Verify that alternative packages support identical thermal and mechanical mounting requirements. Cross-reference gate charge and switching times to ensure equivalent dynamic performance in the target circuit.
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