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GWM160-0055P3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 6N-CH 55V 160A ISOPLUS. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for GWM160-0055P3
- Description：MOSFET 6N-CH 55V 160A ISOPLUS
- Series：-
- Mfr：IXYS
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：55V
- Current - Continuous Drain (Id) @ 25°C：160A
- Rds On (Max) @ Id, Vgs：3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：17-SMD, Flat Leads
- Supplier Device Package：ISOPLUS-DIL™
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for GWM160-0055P3
FET, MOSFET Arrays FAQ
Is the GWM160-0055P3 a standard discrete component?
No, it is a power module designed for high-current industrial applications.
What is the primary semiconductor technology used in this module?
The module utilizes Silicon (Si) IGBT technology.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
