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HAT2026R-EL-E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is NCH PTHERMAL FET 20V 11A 15MOHM. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for HAT2026R-EL-E
- Description：NCH PTHERMAL FET 20V 11A 15MOHM
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：11A
- Drive Voltage (Max Rds On, Min Rds On)：4V
- Rds On (Max) @ Id, Vgs：15mOhm @ 6A, 4V
- Vgs(th) (Max) @ Id：1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1760 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for HAT2026R-EL-E
Single FETs, MOSFETs Overview
The HAT2026R-EL-E is a silicon N-channel power MOSFET designed for high-speed power switching applications. It features a 20V drain-source voltage rating and an 11A continuous drain current capability. The device utilizes a compact surface-mount package with dimensions of 5mm x 4mm x 1.75mm, suitable for space-constrained designs. It is lead-free compliant and classified under Moisture Sensitivity Level 1.
Single FETs, MOSFETs Feature Summary
- High-speed power switching performance
- Compact surface-mount packaging
Single FETs, MOSFETs Applications
- General purpose power switching circuits
- Automotive power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix EL-E against official Renesas documentation to confirm exact pinout and thermal characteristics. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference datasheet revisions to confirm parameter stability before finalizing component selection for production.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, moderate-current switching tasks requiring fast response times. Evaluate thermal dissipation requirements based on the TOLL or similar derivative package performance data. Confirm that the 20V rating provides sufficient headroom for the target application's operating voltage.
Single FETs, MOSFETs Part Context
This part belongs to Renesas' single FET portfolio, specifically categorized as a silicon N-channel power MOSFET. It is engineered for automotive and industrial environments where reliability and switching speed are critical. The product line emphasizes efficiency in power conversion and control applications.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in thermal resistance or gate charge characteristics. Validate any replacement against the original datasheet specifications to ensure functional parity.
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