HAT2038RWS-E

Description：MOSFET 2N-CH 60V 5A 8SOP
Series：-

SKU:2c6b2e637e94 Category: FET, MOSFET Arrays Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

HAT2038RWS-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET 2N-CH 60V 5A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HAT2038RWS-E

Description：MOSFET 2N-CH 60V 5A 8SOP
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Rds On (Max) @ Id, Vgs：58mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：520pF @ 10V
Power - Max：3W (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for HAT2038RWS-E

HAT2038RWS-E

FET, MOSFET Arrays Overview

The HAT2038RWS-E is an N-channel power MOSFET designed for high-speed power switching applications. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 5A at 25°C. The device exhibits a low on-resistance of 58mOhm when tested at a gate-source voltage of 10V with a drain current of 3A. This component is housed in a compact TSOP-6 package, which supports reduced footprint requirements while maintaining reliability standards.

FET, MOSFET Arrays Feature Summary

N-channel silicon power MOSFET architecture optimized for high-speed power switching operations
Low on-resistance characteristic to minimize conduction losses during active states
Compact TSOP-6 package design intended to reduce board space usage and enhance mechanical reliability

FET, MOSFET Arrays Applications

High-speed power switching circuits
DC-DC converter topologies requiring 60V isolation
Motor control driver stages

FET, MOSFET Arrays Procurement Notes

Verify the obsolete status of this specific part number before initiating procurement processes. Confirm availability through authorized distributors or approved substitute channels. Ensure that any replacement components meet the original electrical specifications and package dimensions to maintain system integrity. Request updated lifecycle documentation from the manufacturer to confirm end-of-life timelines and support availability.

FET, MOSFET Arrays Selection Notes

Consider the 60V rating and 5A current capacity when evaluating load requirements. The 58mOhm on-resistance at 10V gate drive is critical for efficiency calculations. Evaluate thermal management needs given the TSOP-6 package size. Compare against available substitutes like DMNH6042SSD-13 if supply chain constraints exist. Ensure gate drive voltage compatibility with the specified test conditions.

FET, MOSFET Arrays Part Context

This component belongs to Renesas Electronics Corporation's discrete semiconductor portfolio, specifically within the power MOSFET category. It is engineered for applications demanding efficient power handling in compact form factors. The product line focuses on providing reliable switching solutions for automotive and industrial electronics sectors.