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Product Detailed Parameters
- Description：RF TRANS 5 NPN 12V 8GHZ 14-SOIC
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- Transistor Type：5 NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：3.5dB @ 1GHz
- Gain：-
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 10mA, 2V
- Current - Collector (Ic) (Max)：65mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：14-SOIC
- Grade：-
- Qualification：-
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Overview
The HFA3046BZ is an Ultra High Frequency NPN transistor array manufactured by Renesas Electronics Corporation. It integrates five NPN transistors within a single SOICN package featuring 14 leads with a 1.3 mm pitch. The device operates across a temperature range of -55°C to +125°C and is rated for harsh environments. Key electrical specifications include a transition frequency (FT) of 5 GHz, a noise figure (NF) of 3.5 dB, and a collector-base capacitance (CCB) of 0.5 pF. Voltage ratings are defined as V(BR)CEO at 12 V, V(BR)CBO at 18 V, and V(BR)EBO at 6 V. Leakage currents are specified with ICBO at 0.1 nA and ICEO at 2 nA.
Feature Summary
- Integrates five NPN transistors in a compact surface-mount configuration
- Designed for ultra-high frequency applications up to 5 GHz
- Qualified for harsh environment conditions and MIL-STD-883 standards
Applications
- Ultra high frequency circuit design
- Harsh environment electronic systems
- Military standard compliant equipment
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and material composition. Ensure compliance with RoHS requirements and moisture sensitivity level classifications prior to integration into production workflows.
Selection Notes
Select this component when a multi-transistor array is required for high-frequency signal processing. Consider the 14-pin SOICN footprint for board space constraints. Verify thermal management capabilities given the 150 mW power dissipation limit and operating temperature range.
Part Context
This part belongs to the HFA3046 family of RF bipolar transistors. Related models include the HFA3096, HFA3127, and HFA3128. These components share similar architectural designs intended for high-performance radio frequency applications requiring multiple matched transistors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for potential alternatives.
