ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS 6 NPN 12V 10GHZ 14-SOIC
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- Transistor Type：6 NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：10GHz
- Noise Figure (dB Typ @ f)：1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
- Gain：12.4dB ~ 17.5dB
- Power - Max：250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 10mA, 3V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：14-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The HFA3102BZ is an all NPN transistor array configured as dual differential amplifiers with tail transistors, manufactured by Renesas Electronics Corporation. Based on the Intersil bonded wafer UHF-1 SOI process, it achieves a transition frequency (fT) of 10 GHz and a power gain-bandwidth product of 5 GHz. The device maintains excellent hFE and VBE matching characteristics over temperature, with collector leakage currents under 0.01 nA. It operates within a temperature range of -40°C to +85°C and is housed in a 14-pin SOIC package.
Feature Summary
- High transition frequency (fT) of 10 GHz for ultra-high-speed operation
- Excellent hFE and VBE matching characteristics maintained over temperature
- Low collector leakage current maintained below 0.01 nA
- Configured as dual differential amplifiers with tail transistors
Applications
- Single Balanced Mixers
- Wide Band Amplification Stages
- Differential Amplifiers
- Automatic Gain Control Circuits
- Wireless Communication Systems
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance and Pb-Free specifications match project requirements. Check moisture sensitivity level (MSL 3) handling procedures before assembly. Validate that the SOIC-14 package dimensions align with PCB footprint designs. Ensure supply chain stability given the obsolete classification.
Selection Notes
Select this component when high-frequency differential signal processing is required with tight matching constraints. Consider the 10 GHz fT limit for bandwidth requirements. Evaluate thermal management needs within the -40°C to +85°C operating range. Compare against similar arrays like HFA3101 if multiplier functionality is needed instead of differential pairs.
Part Context
The HFA3102BZ belongs to the HFA3102 series of RF bipolar transistor arrays. It utilizes Intersil's bonded wafer UHF-1 SOI process technology. This series is designed for high-performance analog applications requiring precise transistor matching and high-speed operation in communication and instrumentation systems.
Replacement Considerations
No direct public substitute part numbers are confirmed for the HFA3102BZ. Designers should evaluate functional equivalents from other manufacturers or redesign circuits to accommodate available components due to the obsolete status.
