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Product Detailed Parameters
- Description：RF TRANS 5 NPN 12V 8GHZ 16-QFN
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Transistor Type：5 NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：3.5dB @ 1GHz
- Gain：-
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 10mA, 2V
- Current - Collector (Ic) (Max)：65mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：16-VFQFN Exposed Pad
- Supplier Device Package：16-QFN (3x3)
- Grade：-
- Qualification：-
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Overview
The HFA3127RZ96 is an ultra-high frequency NPN transistor array fabricated using the Renesas complementary bipolar UHF-1 process. It integrates five dielectrically isolated transistors on a common monolithic substrate within a 16-VFQFN (3x3) package. The device operates at a transition frequency of 8 GHz with a maximum collector-emitter voltage of 12 V and continuous collector current of 65 mA. Power dissipation is rated at 150 mW, and it exhibits a typical noise figure of 3.5 dB at 1 GHz. The component supports surface mount installation and functions across a junction temperature range up to 175°C.
Feature Summary
- Monolithic construction ensures close electrical and thermal matching among the five integrated transistors.
- Dielectric isolation provides individual terminal access for each transistor to maximize application flexibility.
- Low noise characteristics make the device suitable for high-frequency amplifier and mixer applications.
Applications
- High-frequency RF amplifiers
- RF mixer circuits
- Harsh environment electronic systems
Procurement Notes
Verify RoHS compliance status as documentation indicates non-compliance for specific variants. Confirm moisture sensitivity level requirements during storage and handling. Check for End-of-Life notifications or production change notices regarding the manufacturer's labeling updates. Ensure the ordering suffix matches the required packaging format.
Selection Notes
Select this component when five matched NPN transistors are required in a compact footprint. Verify that the 12 V collector-emitter breakdown voltage meets circuit requirements. Consider the 150 mW power dissipation limit for thermal management. Compare against PNP alternatives like the HFA3128 if complementary polarity is needed.
Part Context
This part belongs to the HFA3127 series of ultra-high frequency transistor arrays. It shares the same internal architecture as the HFA3127RZ but differs in packaging configuration. The series includes complementary PNP versions such as the HFA3128 and mixed NPN-PNP configurations like the HFA3096.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The HFA3127RZ shares identical electrical specifications but utilizes tube packaging instead of tape and reel.
