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Product Detailed Parameters
- Description：RF TRANS 2 NPN 9V 8.5GHZ 6-SOT
- Series：-
- Mfr：Intersil
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max)：9V
- Frequency - Transition：8.5GHz
- Noise Figure (dB Typ @ f)：2.4dB @ 1GHz
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：48 @ 10mA, 2V
- Current - Collector (Ic) (Max)：26mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：6-SOT
- Grade：-
- Qualification：-
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Overview
The HFA3134IHZ96 is an RF bipolar transistor manufactured by Renesas Electronics under the Intersil brand. It features a dual NPN configuration housed in an SOT-23 package. The device operates at frequencies up to 8.5 GHz with a minimum DC collector/base gain (hfe) of 48. Key electrical limits include a maximum collector-emitter voltage (VCEO) of 11 V, an emitter-base voltage (VEBO) of 4.5 V, and a continuous collector current of 26 mA. It supports a wide operating temperature range from -40°C to +85°C and includes annealing treatment.
Feature Summary
- Dual NPN matched pair configuration for balanced RF performance
- High-frequency operation capability up to 8.5 GHz
- Integrated annealing process for enhanced reliability
Applications
- RF amplifier circuits requiring matched transistor pairs
- Wireless communication systems operating in UHF bands
- Low-noise front-end stages in receiver architectures
Procurement Notes
Verify component authenticity through authorized Renesas or Intersil distributors. Confirm RoHS compliance status via official datasheets before integration. Ensure handling procedures account for moisture sensitivity classification. Validate package integrity upon receipt to prevent soldering defects during surface mount assembly processes.
Selection Notes
Select this component when dual NPN matching is required for high-frequency applications. Compare against HFA3135IHZ96 if PNP polarity is needed instead. Consider thermal management requirements within the specified -40°C to +85°C range. Verify that the SOT-23 footprint aligns with existing PCB layout constraints and manufacturing capabilities.
Part Context
Part of the HFA3134 series focusing on RF bipolar transistors. Manufactured by Renesas Electronics, formerly Intersil. Designed for silicon-based high-frequency applications. Shares family characteristics with other HFA series components but offers specific NPN dual configuration parameters distinct from single-transistor variants.
Replacement Considerations
HFA3135IHZ96 serves as a functional substitute if PNP polarity is acceptable instead of NPN. Both share similar voltage and current ratings. Verify pin compatibility and thermal characteristics before substitution. No direct equivalent NPN duals are listed in provided documentation.
