HGT1S20N60A4S9A

Description：IGBT 600V 70A TO-263
Series：-

SKU:1078d56034a8 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 70A TO-263
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：280 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
Power - Max：290 W
Switching Energy：105µJ (on), 150µJ (off)
Input Type：Standard
Gate Charge：142 nC
Td (on/off) @ 25°C：15ns/73ns
Test Condition：390V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263 (D2PAK)
Grade：-
Qualification：-

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HGT1S20N60A4S9A

Overview

The HGT1S20N60A4S9A is a MOS-gated high voltage N-channel IGBT designed for switch mode power supplies. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The device features a collector-emitter breakdown voltage (BVCES) of 600 V and supports continuous collector currents up to 70 A at 25°C case temperature. It operates within a junction temperature range of -55°C to 150°C, with a total power dissipation of 290 W at 25°C. The component utilizes a TO-263AB package.

Feature Summary

Optimized for high-frequency operation in switch mode power supplies
Capable of exceeding 100 kHz switching at 390V and 20A
Features a 600V switching safe operating area capability

Applications

High frequency switch mode power supplies
High voltage switching applications requiring low conduction losses

Procurement Notes

Verify the complete part number including the S9A suffix during ordering. Confirm that the component is sourced from Fairchild Semiconductor or authorized distributors, as indicated by the datasheet copyright. Ensure handling precautions are followed due to electrostatic discharge susceptibility.

Selection Notes

Select this component when designing circuits requiring 600V blocking capability and high current handling up to 70A. Consider the thermal resistance of 0.43°C/W and the need for adequate heat sinking to maintain junction temperatures below 150°C under load conditions.

Part Context

This device belongs to the SMPS Series N-Channel IGBTs line. It was formerly identified as Developmental Type TA49339. The product is covered by multiple United States patents held by Fairchild Semiconductor Corporation.