HGT1S3N60B3S

Overview

The HGT1S3N60B3S is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, part of the UFS series. It integrates an anti-parallel hyperfast diode within a single TO-247 package. The device is rated for a collector-emitter voltage of 600V and a continuous collector current of 30A at 25°C case temperature. Key electrical parameters include a typical fall time of 90ns at 150°C junction temperature and a short-circuit rating capability. The component combines MOSFET input impedance with bipolar transistor low conduction loss characteristics.

Feature Summary

• MOS gated high voltage switching device combining MOSFET input impedance with bipolar transistor low on-state conduction loss
• Integrated anti-parallel hyperfast diode for efficient commutation
• Low on-state voltage drop that varies moderately across operating temperatures
• Rated for 600V switching Safe Operating Area (SOA) capability

Applications

• High frequency power switching circuits
• Motor drive inverters
• Uninterruptible Power Supplies (UPS)
• Induction heating systems

Procurement Notes

Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by Intersil, which was subsequently acquired by Renesas. Ensure the datasheet corresponds to the specific suffix B3S and confirms the TO-247 package type. Cross-reference with Fairchild Semiconductor equivalents if sourcing from modern distributors, as original Harris branding may be obsolete.

Selection Notes

Select this component for applications requiring robust 600V blocking capability and moderate switching speeds around 90ns fall time. The integrated hyperfast diode eliminates the need for external freewheeling diodes in bridge configurations. Consider thermal management requirements given the 30A continuous current rating at 25°C case temperature.

Part Context

This IGBT belongs to the UFS (Ultra Fast Switching) series developed by Harris Corporation. The series is characterized by optimized trade-offs between conduction losses and switching times. The HGTG30N60B3D is a closely related variant often cited in technical literature alongside the HGT1S3N60B3S, sharing similar core specifications but potentially differing in packaging or specific testing conditions.

Replacement Considerations

Equivalent parts include the HGTG30N60B3D from Fairchild Semiconductor. Verify pinout compatibility and thermal resistance values before substitution. Check if alternative manufacturers offer comparable 600V/30A IGBTs with integrated diodes in the TO-247 package.