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Product Detailed Parameters
- Description：IGBT 60A, 600V, N CHANNEL, TO 26
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The HGT4E30N60B3S is a single N-channel Insulated Gate Bipolar Transistor manufactured by Harris Corporation. It features a voltage rating of 600V and a continuous collector current capacity of 60A. The device is housed in a TO-26 package, designed for through-hole mounting. This component belongs to the UFS series of IGBTs, offering robust performance for power switching applications requiring high voltage and current handling capabilities within a standard industrial package configuration.
Feature Summary
- Single N-channel IGBT architecture
- 600V blocking voltage capability
- 60A continuous collector current rating
- TO-26 through-hole package format
Applications
- Industrial motor drives
- Power supply inverters
- High-voltage switching circuits
Procurement Notes
Verify manufacturer authenticity as Harris Corporation assets have undergone corporate transitions. Confirm RoHS compliance status and lead-free specifications with the supplier. Ensure the TO-26 package variant matches the required PCB footprint. Request original datasheets to validate electrical parameters against current production standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring 600V isolation and 60A current handling. The TO-26 package suits through-hole assembly processes. Evaluate thermal management requirements based on the 208W power dissipation limits found in similar UFS series devices. Ensure gate drive compatibility with standard IGBT control signals for reliable operation in high-power environments.
Part Context
This part belongs to the Harris Corporation UFS series of N-channel IGBTs. Similar models include the HGTG30N60B3 and HGT4E30N60C3S, which share comparable voltage and current ratings but may differ in specific package variations or internal cell configurations. These components are designed for medium-to-high power switching applications.
Replacement Considerations
The HGTG30N60B3 is a documented substitute within the same product family, offering similar 600V/60A specifications. Verify pinout compatibility and thermal characteristics when substituting. Cross-reference datasheets to ensure functional equivalence in the target circuit design.
