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Product Detailed Parameters
- Description：IGBT 600V 54A TO-247
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：108 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 27A
- Power - Max：208 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：212 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The HGTG27N60C3R is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It belongs to the UFS series and integrates an anti-parallel hyperfast diode within a single TO-247 package. The device features a continuous collector current rating of 54 A at 25°C and a breakdown voltage of 600 V. Key electrical parameters include a typical fall time of 110 ns at a junction temperature of 150°C, a short-circuit withstand capability, and low conduction loss characteristics. The component utilizes silicon technology for robust switching performance in power electronics applications.
Feature Summary
- Integrates an anti-parallel hyperfast recovery diode with the IGBT chip
- Provides short-circuit ruggedness for fault protection
- Maintains stable on-state voltage drop across wide temperature ranges
Applications
- High-frequency AC motor drives
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify manufacturer lineage as Harris Corporation assets were acquired by Fairchild Semiconductor and subsequently by onsemi. Confirm that the specific suffix 'R' corresponds to the reel packaging variant rather than a functional change. Request original datasheets from authorized distributors to ensure parameter consistency with legacy specifications.
Selection Notes
Select this component for designs requiring 600V blocking capability with moderate current handling up to 54A. Ensure thermal management solutions accommodate the power dissipation limits defined in the datasheet. Verify gate drive requirements align with the specified input impedance and switching speed characteristics.
Part Context
This part is part of the UFS (Ultra Fast Switching) series, which combines MOSFET input impedance with bipolar transistor conduction efficiency. The series was historically significant for enabling higher frequency operation in power converters compared to earlier generation IGBTs.
Replacement Considerations
Equivalent parts include the HGTG27N60C3D. Cross-reference with Fairchild or onsemi datasheets for pinout and thermal resistance compatibility before substitution.
