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Product Detailed Parameters
- Description：IGBT 600V 54A TO-220-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：96 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
- Power - Max：167 W
- Switching Energy：55µJ (on), 50µJ (off)
- Input Type：Standard
- Gate Charge：78 nC
- Td (on/off) @ 25°C：17ns/96ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The Fairchild Semiconductor HGTP12N60A4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 54 A. The device utilizes a TO-220AB through-hole package with three pins. It operates within a temperature range from -55 °C to +150 °C, with a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Combines MOSFET input impedance with bipolar transistor low conduction loss
- Optimized for high-frequency switch mode power supply operation
- Features low on-state voltage drop with moderate variation across operating temperatures
Applications
- High frequency switch mode power supplies
- High voltage switching circuits requiring low conduction losses
Procurement Notes
Verify the manufacturer part number against official datasheets to confirm specifications such as the 600 V rating and 54 A current capacity. Ensure the TO-220AB package type matches the design requirements. Cross-reference with distributor listings to validate component authenticity and availability status before procurement.
Selection Notes
Select this component for designs requiring robust high-voltage handling up to 600 V and significant current capacity of 54 A. The TO-220AB package facilitates through-hole mounting, suitable for applications where thermal management via heatsinking is critical. Consider the operational temperature limits when designing for extreme environments.
Part Context
This IGBT belongs to the Fairchild Semiconductor lineup of MOS-gated high voltage switching devices. It integrates the advantages of MOS technology with bipolar performance, targeting efficiency in power conversion systems. The specific model HGTP12N60A4 represents a standard configuration within this series for general-purpose high-power switching.
Replacement Considerations
The HGTG12N60A4D is a related variant that includes an integrated anti-parallel hyperfast diode. Designers should verify if the additional diode functionality is required or if it impacts circuit compatibility when substituting components.
