HGTP12N60C3

Description：IGBT 600V 24A TO-220-3
Series：-

SKU:6dd41d27285b Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 24A TO-220-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：24 A
Current - Collector Pulsed (Icm)：96 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 12A
Power - Max：104 W
Switching Energy：380µJ (on), 900µJ (off)
Input Type：Standard
Gate Charge：48 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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HGTP12N60C3

Overview

The HGTP12N60C3 is a UFS Series N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter voltage of 600V and a continuous collector current of 24A at a case temperature of 25°C. The device utilizes a TO-220AB package with a thermal resistance of 1.2°C/W. Electrical characteristics include a saturation voltage of 1.65V at 25°C and a gate threshold voltage ranging from 3.0V to 6.0V. Switching performance includes a typical fall time of 230ns at 150°C junction temperature, with short-circuit withstand times of 4µs at VGE=15V and 13µs at VGE=10V.

Feature Summary

Combines high input impedance of MOSFETs with low on-state conduction loss of bipolar transistors
Features low conduction loss with moderate variation in on-state voltage drop across operating temperatures
Includes short circuit rating capability for robust operation under fault conditions
Provides switching safe operating area (SSOA) capability at elevated junction temperatures

Applications

AC and DC motor controls
Power supplies
Drivers for solenoids, relays, and contactors

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm the specific revision status and packaging details against the original datasheet specifications. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly to prevent gate oxide damage.

Selection Notes

Select this component for moderate frequency applications requiring low conduction losses. Evaluate thermal management requirements based on the specified power dissipation and thermal resistance values. Consider the short-circuit withstand time limits when designing protection circuits for inductive loads.

Part Context

This device belongs to the UFS Series of N-Channel IGBTs developed by Fairchild Semiconductor, now part of onsemi. It was formerly identified as developmental type TA49123. The product line focuses on combining MOS gate technology with bipolar conduction characteristics for efficient high-voltage switching solutions.