HMC8118

RF Amplifiers Overview

The HMC8118 is an integrated E-band gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) in-phase/quadrature (I/Q) upconverter chip designed for operation between 71 GHz and 76 GHz. It features a drain bias voltage of 4.5 V, gate bias voltages ranging from -3 V to 0 V, and a local oscillator input level of 2 dBm. The device operates with an intermediate frequency of 1000 MHz under specified conditions.

RF Amplifiers Feature Summary

• Integrated I/Q upconversion capability within a single GaAs MMIC package
• Designed for high-frequency E-band applications spanning 71 GHz to 76 GHz
• Utilizes standard biasing configurations for RF amplifier stages

RF Amplifiers Applications

• E-band wireless communication systems
• Point-to-point microwave links
• Test and measurement equipment requiring high-frequency signal generation

RF Amplifiers Procurement Notes

Verify component authenticity through authorized Analog Devices distributors or certified partners. Confirm that the received part matches the specific HMC8118 designation and revision level. Ensure handling procedures comply with electrostatic discharge (ESD) protection standards due to the sensitive nature of the MMIC die. Review current supply status as availability may fluctuate based on manufacturing constraints.

RF Amplifiers Selection Notes

Select this component when designing systems requiring direct I/Q upconversion in the E-band spectrum. Consider the specific bias requirements, including the 4.5 V drain supply and negative gate voltages, during power budget calculations. Evaluate thermal management needs associated with the MMIC structure. Ensure compatibility with the required 1000 MHz intermediate frequency and 2 dBm local oscillator drive levels for optimal performance.

RF Amplifiers Part Context

This device belongs to the family of E-band MMICs produced by Analog Devices, targeting high-speed data transmission applications. It serves as a critical building block for generating upper E-band frequencies from lower intermediate frequencies. The integration of both I and Q paths simplifies the design complexity compared to discrete solutions.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.