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HP8KB5TB1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is 40V 16.5A, DUAL NCH+NCH, HSOP8,. Review the specifications below when checking this part for your BOM.
The HP8KB5TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source voltage rating of 40V and a continuous drain current capacity of 6A. The device exhibits a typical on-resistance of 35 milliohms at a gate-source voltage of 10V. Key electrical characteristics include a gate charge of 1.8 nanocoulombs and a maximum power dissipation of 20W. The component operates within a temperature range from -55°C to +150°C.
Verify the specific ordering code against manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official datasheets before integration into regulated assemblies. Cross-reference pinout diagrams with PCB layout requirements to prevent mounting errors during assembly processes.
Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. Evaluate thermal performance based on the 20W dissipation rating and HSOP-8 thermal resistance. Compare gate charge values against driver capabilities to ensure adequate switching speeds without excessive drive current demands.
This part belongs to ROHM's HSOP-8 power MOSFET family, designed for high-density electronics. It complements other variants like the HP8KB7TB1, which offers higher current ratings. The series targets consumer and industrial equipment requiring reliable small-signal power control.
The SH8KB5TB1 serves as a similar alternative in SOP-8 packaging. Verify pin compatibility and electrical parameter overlaps before substitution. Ensure the replacement meets all thermal and voltage requirements of the original design.
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