FET, MOSFET Arrays HP8KB5TB1 product image

HP8KB5TB1

$1.62
  • Description:40V 16.5A, DUAL NCH+NCH, HSOP8,
  • Series:-

SKU:d6b546772a76 Category: Brand:

  
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HP8KB5TB1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is 40V 16.5A, DUAL NCH+NCH, HSOP8,. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HP8KB5TB1

  • Description:40V 16.5A, DUAL NCH+NCH, HSOP8,
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta), 16.5A (Tc)
  • Rds On (Max) @ Id, Vgs:46mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:150pF @ 20V
  • Power - Max:3W (Ta), 20W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-HSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for HP8KB5TB1

HP8KB5TB1

FET, MOSFET Arrays Overview

The HP8KB5TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source voltage rating of 40V and a continuous drain current capacity of 6A. The device exhibits a typical on-resistance of 35 milliohms at a gate-source voltage of 10V. Key electrical characteristics include a gate charge of 1.8 nanocoulombs and a maximum power dissipation of 20W. The component operates within a temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for synchronized switching applications
  • Low on-resistance design optimized for efficiency
  • Compact HSOP-8 package suitable for space-constrained layouts

FET, MOSFET Arrays Applications

  • General purpose switching circuits
  • Motor driver interfaces
  • Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code against manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official datasheets before integration into regulated assemblies. Cross-reference pinout diagrams with PCB layout requirements to prevent mounting errors during assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. Evaluate thermal performance based on the 20W dissipation rating and HSOP-8 thermal resistance. Compare gate charge values against driver capabilities to ensure adequate switching speeds without excessive drive current demands.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's HSOP-8 power MOSFET family, designed for high-density electronics. It complements other variants like the HP8KB7TB1, which offers higher current ratings. The series targets consumer and industrial equipment requiring reliable small-signal power control.

FET, MOSFET Arrays Replacement Considerations

The SH8KB5TB1 serves as a similar alternative in SOP-8 packaging. Verify pin compatibility and electrical parameter overlaps before substitution. Ensure the replacement meets all thermal and voltage requirements of the original design.

HP8KB5TB1HP8KB5TB1
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