HP8KC6TB1

FET, MOSFET Arrays Overview

The HP8KC6TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP8 (Symmetry Dual) surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current of 23A. The device exhibits low on-resistance, with typical values of 0.029Ω at VGS=4.5V and 0.021Ω at VGS=10V. Total gate charge is typically 3.9nC, supporting efficient switching performance. Power dissipation is rated at 21W, with a drive voltage of 4.5V. Operating temperatures range from -55°C to 150°C storage, and the component complies with RoHS directives.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact HSOP8 surface-mount package for space-constrained designs.
• Low on-resistance characteristics optimized for high-efficiency switching applications.
• Lead-free plating compliant with RoHS directives and halogen-free construction.

FET, MOSFET Arrays Applications

• General purpose switching circuits
• Motor driver interfaces
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TB1 against official ROHM documentation to confirm tape-and-reel packaging quantities and compliance status. Ensure that design requirements align with standard-grade specifications, as this component is explicitly not recommended for automotive equipment. Cross-reference datasheet revisions to confirm thermal and electrical parameters match the intended application constraints before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select the HP8KC6TB1 when a dual N-channel MOSFET with high current capability (23A) and low RDS(on) is required in an HSOP8 footprint. Consider the 60V breakdown voltage and 21W power dissipation limits relative to thermal management capabilities. Verify that the 4.5V drive voltage requirement matches the system logic levels. Note that alternative packages like SOP8 or TSMT8 offer different current ratings and thermal profiles for varying design needs.

FET, MOSFET Arrays Part Context

The HP8KC6TB1 belongs to ROHM's series of dual N-channel power MOSFETs designed for general-purpose switching. It shares the HSOP8 package form factor with related models such as HP8KC5, which offers lower current ratings but similar voltage specifications. This family targets applications requiring compact solutions with efficient power handling, distinct from higher-voltage SiC MOSFETs or automotive-specific grades.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official ROHM selection guides for equivalent devices within the same voltage and current class, ensuring package compatibility and electrical parameter alignment before considering alternatives.