HP8KE7TB1

FET, MOSFET Arrays Overview

The HP8KE7TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of ±24.0A at 25°C case temperature. The device exhibits a maximum static on-resistance (RDS(on)) of 19.6mΩ at VGS=10V and 27.8mΩ at VGS=4.5V. Total gate charge (Qg) is typically 19.8nC at VGS=10V and 10.5nC at VGS=4.5V. Power dissipation reaches 26W, with a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Low on-resistance achieved through advanced manufacturing processes
• Compact HSOP-8 surface mount package for space-saving designs
• Lead-free plating compliant with RoHS standards
• Halogen-free material composition

FET, MOSFET Arrays Applications

• Switching applications in communication base stations
• Industrial equipment power management
• Fan motor drivers for 48V systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official ROHM documentation before finalizing design specifications. Confirm that the HSOP-8 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistance values under actual operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when high current handling and low conduction losses are required within a compact dual-MOSFET form factor. Evaluate the trade-off between breakdown voltage and on-resistance for 100V applications. Consider the gate drive voltage requirements, as RDS(on) varies significantly between 4.5V and 10V drive levels.

FET, MOSFET Arrays Part Context

This part belongs to the HP8KE series of dual N-channel MOSFETs from ROHM. These devices utilize a back-side heat dissipation structure to minimize thermal resistance. The series addresses the industry trend toward higher voltage systems like 48V, offering integrated dual chips to reduce board area compared to discrete solutions.

FET, MOSFET Arrays Replacement Considerations

SP8K2HZG is listed as a replacement option for similar ROHM products, featuring the same pinout and package. Verify compatibility with specific circuit requirements before substitution.