HP8MC5TB1

FET, MOSFET Arrays Overview

The HP8MC5TB1 is a complementary power MOSFET from ROHM Semiconductor, integrating one N-channel and one P-channel transistor within an HSOP8 surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current of 12A. Typical on-resistance values are 0.099 ohms at VGS=4.5V and 0.069 ohms at VGS=10V. The device has a total gate charge of 1.7nC and supports a power dissipation of 20W. Operating temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Complementary N+P channel configuration in a single compact package
• Low on-resistance optimized for switching efficiency
• Small surface-mount HSOP8 footprint

FET, MOSFET Arrays Applications

• General switching applications
• Motor driver circuits
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TB1 against the manufacturer's latest datasheet to confirm tape-and-reel packaging details. Ensure compatibility with RoHS directives and lead-free plating requirements before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual complementary pair is required in a limited space. The low gate charge facilitates faster switching speeds compared to higher-charge alternatives. Verify thermal management capabilities as the HSOP8 package limits heat dissipation relative to larger packages.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's standard-grade HSOP8 power MOSFET family. It serves as a compact solution for replacing discrete N and P-channel transistors in space-constrained designs. The product is designated as recommended for new designs.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include SH8MC5TB1 (SOP8 package) or HP8M51TB1 (100V rating). Verify pinout compatibility and thermal resistance differences when transitioning between SOP8 and HSOP8 variants.