HS8K1TB

FET, MOSFET Arrays Overview

The HS8K1TB is a dual N-channel power MOSFET designed for switching applications, manufactured by Rohm Semiconductor. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 10A. The device exhibits low on-resistance, with typical values of 0.0147Ω at V_GS = 4.5V and 0.0112Ω at V_GS = 10V. Total gate charge (Q_g) is 2.7nC, supporting efficient drive characteristics with a recommended drive voltage of 4.5V. Power dissipation is rated at 2W. The component is housed in an HSML3030L10 surface-mount package, suitable for compact designs such as DC/DC converters.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for space-efficient circuit design
• Low on-resistance to minimize conduction losses
• Small surface-mount package for high-density PCB layouts

FET, MOSFET Arrays Applications

• DC/DC converters
• General switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix, typically TB, to ensure correct packaging format. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure storage temperature ranges between -55°C and 150°C are maintained during handling. Check for any automotive usage restrictions as this is a standard-grade product not recommended for vehicle equipment.

FET, MOSFET Arrays Selection Notes

Select the HS8K1TB when a compact dual N-channel MOSFET with 30V rating and 10A current capacity is required. Consider its low gate charge of 2.7nC for driving efficiency. Compare on-resistance values at specific gate voltages against load requirements. Ensure the HSML3030L10 package fits the available board space and thermal management strategy for 2W dissipation.

FET, MOSFET Arrays Part Context

The HS8K1TB belongs to Rohm's series of dual N-channel power MOSFETs. These components are engineered for general-purpose switching tasks where size and efficiency are critical. The dual configuration allows for half-bridge or synchronous rectifier topologies within a minimal footprint, supporting modern portable and industrial electronics design constraints.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives with similar V_DSS and I_D ratings if supply is limited. Verify that substitute devices maintain comparable R_DS(on) and Q_g specifications to ensure circuit performance stability without redesign.