HT8KB5TB1

FET, MOSFET Arrays Overview

The HT8KB5TB1 is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in an HSMT-8 surface-mount package. It features a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 12 A. The device exhibits a typical on-resistance (Rds(on)) of 47 mΩ at Vgs = 10 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V, and a total gate charge (Qg) of 3.5 nC. The component supports power dissipation up to 13 W, with an operating temperature range from -55°C to +150°C. Switching characteristics include a rise time of 4.7 ns and a fall time of 2.7 ns.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact HSMT-8 package for space-constrained designs.
• Low on-resistance optimized for efficient switching applications.
• High thermal stability supporting operation up to 150°C junction temperature.

FET, MOSFET Arrays Applications

• General purpose switching circuits
• Motor drive applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status directly with the supplier documentation prior to procurement. Ensure the HSMT-8 footprint matches the design layout requirements.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required in a small form factor. The 40V rating and 12A current capacity suit low-voltage DC-DC converters or motor control stages. Evaluate the 47 mΩ Rds(on) against thermal management constraints to ensure the 13W power dissipation limit is not exceeded under load.

FET, MOSFET Arrays Part Context

This part belongs to the HT8KB series of dual N-channel MOSFETs from ROHM Semiconductor. The series is characterized by low on-resistance and high-power density in small packages. The HT8KB5TB1 specifically utilizes the HSMT-8 package, distinguishing it from SOP-8 variants like the SH8KB5 or HSOP-8 variants like the HP8KB5.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage for the HT8KB5TB1?

The absolute maximum gate-source voltage (Vgs) is rated at ±20 V.

Does the HT8KB5TB1 support automotive applications?

No, the product documentation explicitly states that this standard-grade product is not recommended for use in automotive equipment.

What is the typical turn-on delay time for this device?

The provided documentation does not specify the turn-on delay time; it only lists rise time (4.7 ns) and fall time (2.7 ns).