HT8KE5HTB1

FET, MOSFET Arrays Overview

The HT8KE5HTB1 is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in the HSMT-8 surface-mount package. It features a Drain-Source Voltage (Vds) of 100 V and a continuous Drain Current (Id) of 6.5 A. The device exhibits low on-resistance, with Rds(on) values of 0.21 Ω at Vgs = 6 V and 0.158 Ω at Vgs = 10 V. Key electrical parameters include a total gate charge (Qg) of 2.2 nC, power dissipation (Pd) of 13 W, and typical switching times of tr = 42 ns and tff = 46 ns. The component operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact HSMT-8 symmetric package for space-constrained designs.
• Low on-resistance characteristics optimized for efficient power switching and reduced conduction losses.
• High thermal performance capability supporting operation up to 150°C junction temperature.

FET, MOSFET Arrays Applications

• General purpose switching circuits
• Motor driver applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape/reel quantity against the manufacturer's current datasheet before procurement. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the HSMT-8 footprint matches the PCB design requirements. Check for any recent lifecycle notices regarding this specific part number to avoid obsolescence risks during production planning.

FET, MOSFET Arrays Selection Notes

Select the HT8KE5HTB1 when a dual N-channel solution is required with a 100 V breakdown voltage and moderate current handling around 6.5 A. This component is suitable for applications prioritizing low gate charge for faster switching speeds compared to higher-capacitance alternatives. Consider the HSMT-8 package size constraints and verify that the 13 W power dissipation rating aligns with the thermal management strategy of the target system.

FET, MOSFET Arrays Part Context

This component belongs to the HT8KE series of dual N-channel MOSFETs from ROHM Semiconductor. The series utilizes the HSMT-8 package, which provides high power density in a small form factor. Other variants in this family offer different voltage ratings such as 40 V, 60 V, or 150 V, allowing designers to select appropriate devices based on specific circuit voltage requirements while maintaining consistent packaging and mounting characteristics.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 100 V Vds, 6.5 A Id, and HSMT-8 package. Verify equivalent Rds(on) and Qg specifications to ensure similar performance. Consult ROHM documentation for recommended substitute part numbers if available.