HUF75639S3ST_Q

FET, MOSFET Arrays Overview

The Fairchild Semiconductor HUF75639S3ST_Q is an N-channel UltraFET MOSFET designed for high-efficiency power switching applications. It features a 100 V drain-source voltage rating and supports a continuous drain current of 56 A. The device exhibits a low on-resistance of 25 mΩ, contributing to reduced conduction losses. Key electrical characteristics include a gate threshold voltage of 2 V, a maximum power dissipation of 200 W, and a wide operating temperature range from -55 °C to +175 °C. The component utilizes a TO-262-3 surface-mount package.

FET, MOSFET Arrays Feature Summary

• UltraFET technology provides enhanced switching performance with fast rise and fall times.
• Low on-resistance minimizes conduction losses in high-current circuits.
• Robust thermal design allows operation at junction temperatures up to 175 °C.
• Surface-mount construction facilitates automated assembly and compact board layouts.

FET, MOSFET Arrays Applications

• DC-DC converter modules
• Motor control systems
• Power supply output stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'Q' against official Fairchild or onsemi documentation to confirm automotive qualification status, as standard datasheets may not explicitly detail this variant's reliability standards. Ensure the TO-262-3 package dimensions match your PCB footprint requirements. Confirm RoHS compliance details directly with the manufacturer, as regulatory status can vary by production batch and region.

FET, MOSFET Arrays Selection Notes

Select this component when a 100 V N-channel MOSFET with high current handling capability is required. The 25 mΩ on-resistance makes it suitable for low-voltage, high-current applications where efficiency is critical. Consider the TO-262-3 package for through-hole or surface-mount integration depending on mechanical constraints. Evaluate thermal management needs given the 200 W dissipation rating.

FET, MOSFET Arrays Part Context

This part belongs to the HUF75639 series of UltraFET MOSFETs, originally developed by Harris Semiconductor and later acquired by Fairchild Semiconductor, which is now part of onsemi. The series is known for combining low on-resistance with fast switching speeds. The S3 designation indicates the TO-262-3 package style, while the Q suffix typically denotes a qualified version for specific industry standards.

FET, MOSFET Arrays Replacement Considerations

The HUFA75639P3 is a pin-compatible alternative within the same family but uses a TO-220-3 through-hole package rather than surface mount. Verify that the replacement matches the required package type and electrical specifications before substitution.