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HUF75842S3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 150V 43A D2PAK. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HUF75842S3
- Description：MOSFET N-CH 150V 43A D2PAK
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HUF75842S3
FET, MOSFET Arrays Overview
The HUF75842S3 is a silicon N-channel power MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 100 V and a continuous drain current of 36 A at 25 °C. The device utilizes PowerTrench technology to achieve low on-resistance, specified as 29 mΩ typical at a gate-source voltage of 10 V. It is housed in a TO-220AB package with a flange mount configuration. The component supports a junction temperature range from -55 °C to 175 °C and includes internal avalanche rating capabilities for robust operation in switching applications.
FET, MOSFET Arrays Feature Summary
- PowerTrench technology enables low specific on-resistance for improved efficiency
- Unclamped inductive switching (UIS) capability provides ruggedness against transient energy events
- Highly isolated gate structure ensures stable performance under varying thermal conditions
FET, MOSFET Arrays Applications
- DC-to-AC motor drives
- Isolated power supply output stages
- Load switch circuits requiring high current handling
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer origin carefully, as Fairchild Semiconductor's discrete power division was acquired by ON Semiconductor. Ensure the datasheet corresponds to the correct legacy Fairchild documentation or the updated ON Semiconductor equivalent specifications. Confirm that the TO-220AB package dimensions match the required mechanical constraints for the heat sink interface.
FET, MOSFET Arrays Selection Notes
Select this component when a 100 V N-channel MOSFET with approximately 36 A continuous current capacity is required. The low Rds(on) makes it suitable for applications where conduction losses must be minimized. Consider the thermal resistance characteristics of the TO-220AB package to ensure adequate heat dissipation without excessive heatsinking in the final assembly design.
FET, MOSFET Arrays Part Context
This part belongs to the Fairchild PowerTrench series of N-channel MOSFETs. These devices are designed for general-purpose power switching applications. The series is characterized by fast switching speeds and low gate charge, which reduces drive power requirements. The HUF75842S3 specifically targets medium-power applications within this family.
FET, MOSFET Arrays Replacement Considerations
Check for direct pin-compatible equivalents such as the FQP3N60C or similar 100 V N-channel MOSFETs from ON Semiconductor, which succeeded Fairchild's power products. Verify that the replacement maintains the same TO-220AB footprint and meets or exceeds the 36 A current and 29 mΩ resistance specifications.
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