HUF76113DK8T

FET, MOSFET Arrays Overview

The HUF76113DK8T is a dual N-channel power MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It utilizes UltraFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 6 A. The typical on-resistance (Rds(on)) is 32 mΩ at Vgs = 10 V. Gate-source voltage limits are ±20 V, with a maximum power dissipation of 2.5 W. Operating temperatures range from -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single compact SOIC-8 package for space-efficient designs.
• UltraFET technology providing low on-resistance for improved efficiency.
• Logic-level gate drive capability compatible with standard digital control signals.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Load switching applications
• Power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer source, as Fairchild Semiconductor operations were acquired by onsemi. Confirm RoHS compliance status, as some listings indicate non-compliance or restricted supply. Ensure the suffix 'T' denotes tape-and-reel packaging if required for automated assembly. Check for obsolescence notices or lifecycle changes associated with the legacy Fairchild branding.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with 30 V rating and approximately 6 A current capacity is needed in an SOIC-8 footprint. Compare Rds(on) specifications against thermal requirements. Verify that the gate charge characteristics meet the switching frequency demands of the target application. Ensure the operating temperature range aligns with the environmental conditions.

FET, MOSFET Arrays Part Context

This component belongs to the UltraFET series of power MOSFETs, designed for high-efficiency power switching. The HUF76113 variant specifically integrates two independent N-channel devices in one package, reducing board space compared to discrete solutions. The transition from Fairchild to onsemi affects documentation sources but not the underlying silicon design.

FET, MOSFET Arrays Replacement Considerations

Check for equivalents such as the HUF76113D (tray version) or other 30 V dual N-channel MOSFETs in SOIC-8 packages from onsemi or other manufacturers. Verify pinout compatibility and electrical parameter equivalence before substitution.