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HUFA76409T3ST is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HUFA76409T3ST
- Description：MOSFET N-CH
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HUFA76409T3ST
FET, MOSFET Arrays Overview
The HUFA76409T3ST is a single N-channel power MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It utilizes UltraFET technology and is housed in a TO-252 (DPAK) surface-mount package. The device features a drain-source breakdown voltage of 60V and a continuous drain current rating of 18A at 25°C. Key electrical parameters include a maximum on-resistance of 25 milliohms at a gate-source voltage of 10V, with a typical gate charge of 22 nanocoulombs. It supports an operating junction temperature range from -55°C to +175°C.
FET, MOSFET Arrays Feature Summary
- UltraFET planar technology for low on-resistance
- Logic-level gate drive capability
- Lead-free packaging compliant with RoHS standards
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power switching applications
- Motor control systems
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor's discrete semiconductor division was acquired by onsemi. Ensure the datasheet corresponds to the correct legacy or current documentation. Confirm that the component meets specific environmental compliance requirements such as RoHS and REACH before finalizing procurement specifications.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring a 60V N-channel MOSFET in a DPAK package. Evaluate thermal management needs based on the 18A continuous current rating and 25mΩ on-resistance. Consider the logic-level gate threshold for compatibility with standard microcontroller or driver outputs in switching applications.
FET, MOSFET Arrays Part Context
This component belongs to the UltraFET family of power MOSFETs designed for high-efficiency switching. The series is characterized by optimized cell density to minimize conduction losses while maintaining robust avalanche capabilities. It serves as a standard solution for general-purpose power management tasks in consumer and industrial electronics.
FET, MOSFET Arrays Replacement Considerations
Check for direct cross-reference part numbers within the onsemi portfolio. Verify pinout compatibility and thermal resistance values when substituting with other 60V DPAK MOSFETs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
