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HZS24NB4TD-E is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is DIODE ZENER 0.4W. Review the specifications below when checking this part for your BOM.
The HZS24NB4TD-E is a unidirectional silicon Zener diode manufactured by Renesas Electronics Corporation. It features a maximum power dissipation of 0.4 W and utilizes the DO-34 glass axial leaded package with two pins. The device is designed for high-temperature operation, supporting a maximum operating temperature of 200 °C. Classified as a voltage regulator diode, it serves as a discrete semiconductor component for circuit stabilization.
Verify the specific suffix 'E' against official Renesas documentation to confirm if it denotes a specific environmental compliance or tape-and-reel configuration distinct from standard variants. Ensure the DO-34 package dimensions match the target PCB footprint requirements before integration.
Select this component when a robust, high-temperature capable Zener diode is required for low-power voltage regulation. The 0.4 W dissipation rating and DO-34 package make it suitable for through-hole mounting in industrial or automotive environments where thermal resilience is critical.
This part belongs to the HZS-N series of silicon epitaxial planar Zener diodes intended for stabilized power supplies. The series offers a wide spectrum of Zener voltages and is characterized by low leakage current and low impedance, making it a reliable choice for precision voltage clamping tasks.
Compatible substitutes within the same family include HZS24NB4TDX and HZS24NB4TA. Verify that alternative part numbers maintain the identical DO-34 package and 0.4 W power rating to ensure mechanical and electrical compatibility.
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