IAM-92516-BLK

RF Mixers Overview

The IAM-92516-BLK is a high linearity GaAs FET RF mixer manufactured by Broadcom Limited. It operates with a supply voltage of 10V and draws a supply current of 26mA. The device features a built-in local oscillator (LO) buffer amplifier, requiring only -3 dBm LO power to achieve an input third-order intercept point (IIP3) of +27 dBm. The LO port presents a 50-ohm impedance. The component is housed in a 16-LPCC (3x3 mm) surface-mount package.

RF Mixers Feature Summary

• High linearity performance utilizing GaAs FET technology
• Integrated local oscillator buffer amplifier for simplified drive requirements
• Optimized for low LO drive power operation at -3 dBm

RF Mixers Applications

• RF front-end modules requiring high linearity
• Wireless communication systems
• Test and measurement equipment

RF Mixers Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or surplus channels. Ensure compatibility with existing 10V supply rails and 50-ohm interface requirements. Check for lead time variations associated with end-of-life products.

RF Mixers Selection Notes

Select this component when high linearity and low LO drive sensitivity are critical design constraints. The integrated LO buffer simplifies circuit topology by reducing external component count. Evaluate thermal management needs given the 26mA operating current. Consider the 16-LPCC package dimensions for PCB layout constraints.

RF Mixers Part Context

This part belongs to Broadcom's portfolio of RF mixers designed for wireless infrastructure applications. It represents a specialized solution for signal conversion tasks where linearity impacts system dynamic range. The GaAs FET process offers advantages in noise figure and intermodulation performance compared to standard silicon alternatives.

RF Mixers Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Due to the specific integration of the LO buffer and GaAs FET characteristics, direct pin-to-pin replacements may not exist without circuit redesign.