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IAUC120N06S5N017ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 120A TDSON-8-43. Review the specifications below when checking this part for your BOM.
The IAUC120N06S5N017ATMA1 is an OptiMOS™-5 N-channel enhancement mode power MOSFET designed for automotive applications. It features a PG-TDSON-8-43 package and supports a drain-source voltage of 60 V with a maximum on-state resistance of 1.7 mΩ at 10 V gate drive. The device handles a continuous drain current of 120 A and a pulsed current of 757 A, dissipating up to 167 W. It operates within a temperature range of -55 °C to +175 °C, includes 100% avalanche testing, and meets MSL1 standards.
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with PG-TDSON-8-43 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's certificate of conformity prior to integration into production lines.
Select this component when low conduction losses are critical in high-current automotive designs. The 60 V rating suits 12 V and 48 V system architectures. Evaluate the thermal resistance characteristics against the target PCB copper area to ensure junction temperatures remain within safe operational limits under continuous load conditions.
This transistor belongs to the OptiMOS™-5 family, representing advanced trench gate technology from Infineon Technologies. It is engineered specifically for the automotive sector, providing enhanced ruggedness compared to standard industrial counterparts. The part integrates robust gate oxide protection and optimized cell geometry for superior efficiency.
Direct replacements require matching the PG-TDSON-8-43 package and 60 V / 1.7 mΩ electrical profile. Verify that alternative candidates also possess AEC-Q101 certification and equivalent avalanche ratings to maintain system reliability in automotive contexts.
Yes, it is explicitly designed for automotive applications, featuring 175 °C operation and 100% avalanche testing.
The device supports a pulsed drain current of 757 A at Tc=25 °C with a pulse width of 100 µs.
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