IAUT300N08S5N014ATMA1

$4.08

Description：MOSFET N-CH 80V 300A 8HSOF
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a5ac08d45005 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IAUT300N08S5N014ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 300A 8HSOF. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IAUT300N08S5N014ATMA1

Description：MOSFET N-CH 80V 300A 8HSOF
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：300A (DC)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.8V @ 230µA
Gate Charge (Qg) (Max) @ Vgs：187 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13178 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-HSOF-8-1
Package / Case：8-PowerSFN

Single FETs, MOSFETs datasheet and documents for IAUT300N08S5N014ATMA1

IAUT300N08S5N014ATMA1

Single FETs, MOSFETs Overview

The IAUT300N08S5N014 is an N-channel enhancement mode OptiMOS™-5 power transistor designed for automotive applications. It features a PG-HSOF-8-1 package with a maximum drain-source voltage of 80 V and a continuous drain current of 300 A at 25°C. The device achieves an ultra-low on-state resistance of 1.4 mΩ max at VGS=10V. It supports a junction temperature up to 175°C, operates within -55°C to +175°C, and has a thermal resistance (junction-to-case) of 0.5 K/W.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
OptiMOS™-5 technology enabling ultra-low on-state resistance
100% avalanche tested for robustness under transient conditions
Green product compliant with RoHS requirements

Single FETs, MOSFETs Applications

Automotive power switching circuits
High-current DC-DC converter stages
Motor control drive systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized distribution channels. Confirm that the requested part matches the exact datasheet revision and marking code required for your design integration.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction losses are critical in space-constrained automotive designs. The PG-HSOF-8-1 package offers efficient thermal dissipation suitable for high-power density applications. Consider the 175°C operating limit for environments requiring extended thermal headroom beyond standard industrial grades.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS™-5 family of N-channel MOSFETs from Infineon Technologies. It utilizes advanced silicon planar trench gate technology optimized for low Rds(on) and fast switching speeds. The series is specifically engineered to meet the rigorous demands of modern automotive electronics platforms.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains identical pinout, package dimensions, and electrical ratings such as VDS, ID, and Rds(on). Verify that alternative parts also hold necessary automotive certifications if used in safety-critical systems.