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The ICPB2002 is a discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (GaN HEMT) manufactured by ICONIC RF Ltd. It operates from DC to 12 GHz with a nominal P3dB output power of 41.5 dBm. The device utilizes field plate technology for optimized power and efficiency, achieving a maximum Power Added Efficiency (PAE) of 65% at 6 GHz under a 28V drain bias. Key electrical parameters include a typical gain of 19.5 dB at 3 GHz and a maximum channel temperature rating of 275°C.
Verify the manufacturer designation as ICONIC RF Ltd rather than Microchip Technology when sourcing this component. Confirm that the specific ordering suffix matches the engineering datasheet revision B specifications. Ensure procurement channels provide appropriate electrostatic discharge protection during handling due to the sensitivity of the semiconductor die.
Select this component for applications requiring wideband operation up to 12 GHz with high linearity. Evaluate thermal management requirements carefully given the high power dissipation capabilities and elevated temperature ratings. Consider the specific bias-up and bias-down procedures required for reliable integration into RF amplifier circuits.
This component belongs to the class of discrete power GaN HEMTs designed for high-frequency RF amplification. Unlike integrated solutions, it requires external matching networks and careful biasing control. It serves as a fundamental building block for high-power transmitters in demanding environments where silicon-based devices may lack sufficient performance or thermal resilience.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult ICONIC RF Ltd directly for potential cross-reference options or updated product lines.