ICPB2005-1-110I

Overview

The ICPB2005 is a discrete Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT) manufactured by ICONIC RF Ltd. Designed for operation from DC to 12 GHz, the device delivers a nominal P3dB output power of 44.5 dBm with a maximum Power Added Efficiency (PAE) of 65% at 6 GHz under a 28V drain bias. The chip measures 0.81 x 1.68 x 0.10 mm and supports both pulsed and continuous wave modes.

Feature Summary

• Utilizes GaN on SiC technology optimized with field plate design for enhanced power and efficiency.
• Capable of operating in both pulsed and continuous wave modes across a wide frequency range.
• Features specific bond pad configurations for gate, drain, and source connections.

Applications

• Aerospace & Defense systems
• Broadband Wireless infrastructure

Procurement Notes

Verify the manufacturer as ICONIC RF Ltd, not Microchip Technology. Confirm the datasheet revision is Rev B. Ensure handling procedures for ESD sensitivity are followed during assembly. Check that the package type matches the mechanical drawing specifications provided in the official documentation.

Selection Notes

Select this component for high-frequency applications requiring up to 12 GHz operation. Consider the 28V drain bias requirement and the need for precise quiescent current control between 0.1A and 0.25A. Evaluate thermal management capabilities given the maximum channel temperature rating of 225°C.

Part Context

This component is a discrete power HEMT intended for RF power amplification. It belongs to the ICPB2005 series designed by ICONIC RF Ltd. The device is distinct from integrated circuits or microcontrollers, focusing solely on RF performance metrics like gain and PAE.

Replacement Considerations

No public substitute part numbers are documented in the provided datasheet. Consult ICONIC RF Ltd for potential alternatives or updated versions within their product portfolio.

FAQ

What is the recommended bond wire diameter for assembly?

A bond wire diameter of 1.5 mils is recommended for interconnect assembly.

What is the maximum channel temperature rating?

The maximum channel temperature is rated at 225°C for operation and 275°C for absolute maximum ratings.

How should the device be biased up?

Set VG to -5V, apply VD of 28V, then adjust VG positive until ID quiescent reaches 0.1A, limiting ID to 4A before applying RF signal.