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The IFN160AST3TR is an N-channel JFET from the IFN160A series, manufactured by InterFET. It utilizes InterFET's N107A geometry and is housed in a surface-mount SOT-23 package. Key electrical parameters include a gate-to-source breakdown voltage (V(BR)GSS) of -75 V, a typical gate leakage current (IGSS) of 3.0 pA at 20 V, and a typical input capacitance (Ciss) of 4 pF. The device features a typical cutoff voltage (VGS(OFF)) of -1.0 V and a forward transconductance (GFS) of 1500 µS. Maximum ratings specify a continuous power dissipation of 350 mW and an operating junction temperature range of -55 to 150 °C.
Verify the specific binning option required, as the IFN160A series includes A, B, and C variants with different IDSS ranges. Confirm that the TR suffix indicates tape and reel packaging rather than bulk. Ensure the design accounts for the interchangeable S/D pin configuration during schematic capture and footprint creation.
Select this component for cost-sensitive low noise designs requiring high input impedance. Compare the IFN160A against similar parts like the 2SK160 or BF510 if exact cross-referencing is needed. Consider the -75 V reverse gate-source voltage rating when designing biasing circuits to ensure operation within safe limits.
This part belongs to the IFN160A-B-C family of N-channel JFETs designed for audio and general-purpose amplification. It serves as an exact cross for the 2SK160 JFET. The IFN160AST3TR specifically denotes the 'A' bin variant packaged in a 7-inch or 13-inch tape and reel format.
Officially documented industry standard crosses include the 2SK160, BF510, BF511, J305, and MMBFJ202. Similar parts from InterFET include the 2N4339, 2N4340, and J202. Verify pinout compatibility and electrical parameter overlaps before substituting.