IGB15N65S5ATMA1

IGB15N65S5ATMA1

$2.24
  • Description:IGBT TRENCH FS 650V 35A TO263-3
  • Series:TRENCHSTOP™ 5

SKU:3af08835ceed Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 35A TO263-3
  • Series:TRENCHSTOP™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):35 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 15A
  • Power - Max:105 W
  • Switching Energy:250µJ (on), 140µJ (off)
  • Input Type:Standard
  • Gate Charge:38 nC
  • Td (on/off) @ 25°C:12ns/117ns
  • Test Condition:400V, 15A, 25Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:PG-TO263-3-2
  • Grade:-
  • Qualification:-

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IGB15N65S5ATMA1

Overview

The IGB15N65S5ATMA1 is a single N-channel TRENCHSTOP™ 5 high-speed soft-switching IGBT in PG-TO263-3. It features a 650 V collector-emitter voltage and a continuous collector current of 35 A at 25°C case temperature, dropping to 23 A at 100°C. The saturation voltage is 1.35 V at 15 A and 25°C. Maximum junction temperature reaches 175°C with a power dissipation of 105 W at 25°C.

Feature Summary

  • High-speed S5 technology designed for both hard and soft switching applications
  • Low gate charge (QG) combined with very low collector-emitter saturation voltage
  • Maximum junction temperature rating of 175°C for enhanced thermal performance
  • RoHS compliant with lead-free lead plating

Applications

  • Solar String Inverter
  • Industrial SMPS
  • Welding Equipment
  • Energy Storage Systems
  • EV Chargers

Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the component meets all relevant JEDEC qualification standards required for industrial applications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-speed switching capabilities alongside low conduction losses. Consider the thermal resistance characteristics and derating curves when determining heat sink requirements. Verify compatibility with existing gate drive circuits due to the specific gate charge parameters provided in the datasheet.

Part Context

This device belongs to Infineon's fifth-generation TRENCHSTOP™ 5 discrete IGBT family. It serves as a direct plug-and-play replacement for previous generation IGBTs within the same voltage and current ratings, offering improved switching efficiency without requiring major circuit redesigns.

Replacement Considerations

Officially documented as a plug-and-play replacement for previous generation IGBTs from the same manufacturer series. Cross-referencing exact pinout and thermal footprint dimensions with legacy components is recommended to ensure mechanical compatibility.

FAQ

Is the IGB15N65S5 qualified for automotive applications?

No, the product is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.

What is the maximum transient gate-emitter voltage allowed?

The maximum transient gate-emitter voltage is ±30 V, provided the pulse width is less than or equal to 10 µs and the duty cycle is below 0.010.

How does the DC collector current change with case temperature?

The DC collector current is rated at 35.0 A at a case temperature of 25°C and decreases to 23.0 A at a case temperature of 100°C.

IGB15N65S5ATMA1IGB15N65S5ATMA1
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