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The IGB15N65S5ATMA1 is a single N-channel TRENCHSTOP™ 5 high-speed soft-switching IGBT in PG-TO263-3. It features a 650 V collector-emitter voltage and a continuous collector current of 35 A at 25°C case temperature, dropping to 23 A at 100°C. The saturation voltage is 1.35 V at 15 A and 25°C. Maximum junction temperature reaches 175°C with a power dissipation of 105 W at 25°C.
Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the component meets all relevant JEDEC qualification standards required for industrial applications before finalizing procurement orders.
Select this component for designs requiring high-speed switching capabilities alongside low conduction losses. Consider the thermal resistance characteristics and derating curves when determining heat sink requirements. Verify compatibility with existing gate drive circuits due to the specific gate charge parameters provided in the datasheet.
This device belongs to Infineon's fifth-generation TRENCHSTOP™ 5 discrete IGBT family. It serves as a direct plug-and-play replacement for previous generation IGBTs within the same voltage and current ratings, offering improved switching efficiency without requiring major circuit redesigns.
Officially documented as a plug-and-play replacement for previous generation IGBTs from the same manufacturer series. Cross-referencing exact pinout and thermal footprint dimensions with legacy components is recommended to ensure mechanical compatibility.
No, the product is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.
The maximum transient gate-emitter voltage is ±30 V, provided the pulse width is less than or equal to 10 µs and the duty cycle is below 0.010.
The DC collector current is rated at 35.0 A at a case temperature of 25°C and decreases to 23.0 A at a case temperature of 100°C.