IGB20N65S5ATMA1

Description：IGBT TRENCH FS 650V 40A TO263-3
Series：TRENCHSTOP™ 5

SKU:f42ece719aa2 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 40A TO263-3
Series：TRENCHSTOP™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 20A
Power - Max：125 W
Switching Energy：360µJ (on), 150µJ (off)
Input Type：Standard
Gate Charge：48 nC
Td (on/off) @ 25°C：13ns/115ns
Test Condition：400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

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IGB20N65S5ATMA1

Overview

The IGB20N65S5ATMA1 is a single N-channel Insulated Gate Bipolar Transistor from Infineon's TRENCHSTOP™ 5 high-speed switching series. It features a PG-TO263-3 (D2PAK) surface-mount package and operates with a collector-emitter voltage of 650 V. The device supports a continuous collector current of 40 A at 25°C case temperature, reducing to 28 A at 100°C. It exhibits a low saturation voltage of 1.35 V at nominal current and a maximum junction temperature rating of 175°C.

Feature Summary

High-speed smooth switching capability for both hard and soft switching applications
Low gate charge (QG) combined with very low collector-emitter saturation voltage
Maximum junction temperature rating of 175°C for enhanced thermal performance
RoHS compliant construction with lead-free plating

Applications

Solar string inverters
Industrial SMPS and UPS systems
Welding equipment
Energy storage systems
EV chargers

Procurement Notes

Verify the component against official Infineon datasheet revision 2.2 specifications. Confirm that the ordering suffix ATMA1 corresponds to the correct reel or cut tape packaging format required by your assembly line. Ensure the procurement channel provides traceability documentation matching the manufacturer's quality standards.

Selection Notes

Select this component when designing circuits requiring high-speed switching with minimal conduction losses. The 650V rating suits medium-voltage DC bus applications. Evaluate the thermal resistance characteristics to ensure adequate heat sinking, as power dissipation decreases significantly above 25°C case temperature.

Part Context

This part belongs to the TRENCHSTOP™ 5 generation, designed as a plug-and-play replacement for previous generations of IGBTs. It utilizes silicon technology optimized for industrial power supplies and energy conversion systems where efficiency and switching speed are critical design parameters.