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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO263-3
- Series：TrenchStop™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：270 W
- Switching Energy：1.59mJ (on), 750µJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：23ns/173ns
- Test Condition：400V, 50A, 12Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3
- Grade：-
- Qualification：-
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Overview
The IGB50N65H5ATMA1 is a single-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP™ 5 series, utilizing silicon technology. It features a D2PAK-3 (TO-263-3) surface-mount package with a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device exhibits a saturation voltage of 1.65 V and supports a power dissipation of 270 W. Operating temperatures range from -40°C to +175°C junction temperature.
Feature Summary
- Incorporates TRENCHSTOP™ 5 technology for optimized switching performance
- Designed for high-efficiency power conversion applications
- Features robust thermal management capabilities within the TO-263-3 package
Applications
- Motor drives
- Switched-mode power supplies
- Industrial inverters
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions meet moisture sensitivity level requirements. Validate part markings against manufacturer specifications to prevent counterfeit risks during assembly.
Selection Notes
Select this component for designs requiring 650 V blocking capability with moderate current handling in compact surface-mount layouts. Consider thermal resistance characteristics when designing heat sinking solutions. Evaluate gate charge parameters against driver capabilities to ensure optimal switching speeds and minimize losses.
Part Context
This IGBT belongs to Infineon's TRENCHSTOP™ 5 family, which integrates advanced trench gate technology with field-stop structures. The H5 designation indicates specific optimization for balanced switching characteristics. The ATMA1 suffix denotes tape-and-reel packaging suitable for automated surface-mount assembly processes.
Replacement Considerations
Cross-reference with other TRENCHSTOP™ 5 devices sharing identical pinouts and electrical ratings. Verify package compatibility before substitution. Check datasheet revisions for any parameter updates that may affect circuit performance.
