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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.97V @ 15V, 100A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The IGC99T120T8RLX1SA3 is a discrete IGBT4 chip manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a pulsed collector current rating of 300 A. The component supports surface-mount mounting and operates within a standard temperature range. As a bare die, it is designed for integration into custom power modules or hybrid assemblies requiring high-voltage switching capabilities.
Feature Summary
- Utilizes Infineon's IGBT4 technology for optimized switching performance
- Designed as a bare die for flexible module integration
- Supports high-voltage operation up to 1200 V
Applications
- Custom power module assembly
- Hybrid inverter construction
- Industrial motor drive systems
Procurement Notes
Verify the specific lot marking and wafer origin upon receipt, as this is a bare semiconductor die rather than a packaged component. Ensure handling procedures comply with electrostatic discharge (ESD) protection standards required for exposed silicon chips. Confirm that the receiving facility has appropriate equipment for die attachment and wire bonding if integrating into a larger system.
Selection Notes
Select this component when designing custom power electronics that require a 1200 V rated IGBT die. It is suitable for applications needing a pulsed current capacity of 300 A. Engineers must account for thermal management and mechanical mounting solutions specific to bare die technologies, as no external package provides inherent heat sinking or electrical isolation.
Part Context
This part belongs to Infineon's IGBT4 family, which represents an evolution in insulated gate bipolar transistor technology. The 'T8' designation typically refers to the specific chip generation or variant within the product line. As a raw die, it differs from packaged modules like the EasyPACK series by offering designers full control over the power stage architecture.
Replacement Considerations
Direct replacements are limited due to the bare die format. Compatible alternatives include other 1200 V IGBT dies from Infineon such as the IGC99T120T6RL, provided the pulsed current and thermal characteristics meet the design requirements. Cross-referencing datasheets for exact electrical limits is essential.
