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The IGD06N65T6 is a TRENCHSTOP™ IGBT6 device in PG-TO252-3 packaging. It features a collector-emitter voltage of 650 V and a DC collector current of 9.0 A at 25°C, dropping to 6.0 A at 100°C. The typical saturation voltage is 1.5 V at 25°C. Switching characteristics include a turn-on energy of 0.06 mJ and turn-off energy of 0.03 mJ at 25°C. Gate charge is typically 13.7 nC. The component supports a short-circuit withstand time of 3 µs and operates up to a maximum junction temperature of 175°C.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm that the component meets industrial qualification standards per JEDEC tests. Ensure the application does not require automotive certification, as this part lacks AEC-Q101 validation. Cross-reference thermal resistance values with the target PCB footprint design.
Select this component for applications requiring a 650 V rating with moderate current handling up to 9 A. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the switching energy losses relative to the gate resistor requirements. Verify compatibility with standard TO-252 mounting constraints and thermal management solutions.
This device belongs to the TRENCHSTOP™ IGBT6 family, designed for 650 V applications. It offers improved performance over previous generations through trench technology. The product spectrum includes various packages and ratings within the same technological lineage. PLECS models are available for simulation purposes.
Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 650 V rating and PG-TO252-3 package dimensions. Verify equivalent switching speeds and thermal resistance characteristics.
No, the datasheet explicitly states that the product is not qualified according to AEC-Q100 or AEC-Q101 documents.
The device supports a short-circuit withstand time of 3 microseconds under specified conditions.
The provided datasheet describes the IGBT characteristics only and does not list an integrated freewheeling diode.