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The IGD10N65T6 is a TRENCHSTOP™ IGBT6 in trench and field-stop technology designed for 650V applications. It features a collector-emitter saturation voltage of 1.5V (typ.) at 25°C, a maximum junction temperature of 175°C, and a short circuit withstand time of 3µs. The device offers low gate charge and tight parameter distribution with high ruggedness. Qualified for industrial applications according to JEDEC standards, it is housed in a PG-TO252-3 package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compatibility with JEDEC moisture sensitivity levels for reflow soldering processes. Confirm that the application environment remains within the specified industrial qualification limits and does not require automotive AEC-Q101 certification.
Select this component for general-purpose drive and appliance applications requiring robust 650V switching. Consider the 175°C maximum junction temperature for thermal management design. Evaluate the 3µs short circuit withstand capability for protection circuit requirements. Verify that the PG-TO252-3 package footprint aligns with the target PCB layout constraints.
This part belongs to the Infineon TRENCHSTOP™ IGBT6 family, utilizing trench and field-stop technology. It is distinct from automotive-grade variants as it lacks AEC-Q101 qualification. The product spectrum includes PLECS models for simulation. It serves as a solution for industrial power conversion where high reliability and moderate switching speeds are required.
Consult official Infineon cross-reference tools for verified substitutes. Ensure any replacement maintains the 650V rating, TO252-3 package, and industrial qualification status. Do not assume functional equivalence with automotive-rated parts without explicit manufacturer confirmation.
No, the datasheet explicitly states that this product is not qualified according to AEC-Q100 or AEC-Q101 documents.
The device supports a short circuit withstand time of 3µs under specified conditions (VGE=15.0V, VCC≤360V).
The typical VCEsat is 1.5V at a junction temperature of 25°C and IC=8.5A.